Technique for preparation of precise wafer cross sections and applications to electron beam lithography of poly„methylmethacrylate... resist
نویسندگان
چکیده
We have developed a method of cross-sectioning silicon wafers with high placement precision. It is implemented by using optical lithography and deep plasma high aspect ratio etching of a thin line, which is used as the breaking axis. This technique is then applied to cross-sectional scanning electron microscopy ~SEM! studies of sub-50 nm electron beam lithography in ~poly!methylmethacrylate resist. We also report the development of a process for protecting the resist during SEM examination. © 2002 American Vacuum Society. @DOI: 10.1116/1.1518020#
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